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VLSI- LBI JODHPUR NOV BATCH1-13TH JAN 2025

1 / 50

How will the number -8`d4 ( in Verilog) be internally represented as bits?

2 / 50

Bonding pads are placed

3 / 50

Larger energy bandgap _____ parasitic capacitances.

4 / 50

What is the output of the following two equations in Verilog?
i) assign Y=4’b1010 & 4’b0110;
ii) assign Y =4’b1010&& 4’b0110;

5 / 50

Which of the following statements is incorrect

6 / 50

Which of the following statements is incorrect

7 / 50

Which of the following tasks is typically NOT performed by a testbench in simulation based RTL verified

8 / 50

Which of the following statements best describes the purpose of behavior systems in VLSI design flow?

9 / 50

Which of the following statements about non-blocking assignments in Verilog is incorrect?

10 / 50

Which among the following is a variable cost in standard cell based design

11 / 50

How many transistors are required to implement a X-input dynamic CMOS logic?

12 / 50

The variable A contains the bit sequence (1011) the variable Y is obtained by applying the reduction operator, Y=|A what will be the final value of Y?

13 / 50

Which of the following statements/are true with respect to testing?

14 / 50

What is the purpose of carrying out hardware software partitioning for a system?

15 / 50

In latch-up condition, parasitic component gives rise to__________ conducting path.

16 / 50

Inverter threshold voltage is the point where

17 / 50

Which of the following data types can store value during Verilog simulation

18 / 50

Which of the following statements is incorrect about code coverage

19 / 50

What is the purpose of masks in photolithography

20 / 50

Find the voltage Vx (assume vtn is 0.3v)

21 / 50

In the adder, sum is stored in

22 / 50

Input and output pads are made up of

23 / 50

Which of the following statements best describes Moore’s prediction or Moore’s law

24 / 50

NMOS transistors are used as pass transistor, and a gate voltage (V GS ) much larger than the threshold voltage(V THN ) is applied. On the source side of this NMOS pass transistor, a voltage V DD is applied. What will be the drain voltage of this NMOS transistor.? Please assume that the body of the transistor is grounded.

25 / 50

For which of the following figures of merit, dedicated hardware can be better than the same function implemented as software running on a general purpose processor.

26 / 50

The Higher Noise Margin is given by:

27 / 50

Which design is preferred in n-bit adder?

28 / 50

A digital multiplexer is a combinational circuit that selects___________

29 / 50

Pass transistors are transistors used as ________

30 / 50

Mobility degradation observed in short channel MOS device due to

31 / 50

Increasing fan-out ____________ the propagation delay.

32 / 50

_______ layer should be over ______ layer.

33 / 50

The relation between threshold voltage and Noise Margin is:

34 / 50

Which of the following statement is incorrect about a Verilog function?

35 / 50

An event-based RTL simulator keeps the events ordered in the event queue according to

36 / 50

Logic reduces the transistor counts which are used to make different logic gates by eliminating the redundant transistor is called ____________

37 / 50

In the pulldown network of a NAND logic shown below, to obtain a high speed of operation , the critical signal must be connected to the gate of ____________

38 / 50

Stick diagrams are those which convey layer information through?

39 / 50

Which among the following design styles require maximum design effort

40 / 50

A____________ is a level sensitive device while a ______depends on clock pulse for their operation.

41 / 50

Which of the following statement will be execute from
the below program?

reg [3:0] x=4’b000x;
always @(*)
begin
casex(x)
4’b0000 : statement 1;
4’b0100 : statement 2;
4’b1100 : statement 3;
4’b0001 : statement 4;
endcase
end

42 / 50

For a sequential circuit, which of the following is true

43 / 50

In nMOS inverter configuration depletion mode device is called as ________

44 / 50

The oxide layer below the first metal layer is deposited using__________

45 / 50

Noise Margin is:

46 / 50

In basic inverter circuit _____________ is connected to ground.

47 / 50

How many transistors might bring up latch up effect in p-well structure?

48 / 50

Buffers are needed to drive

49 / 50

Which of the following representation of a design has the highest degree of abstraction

50 / 50

Mobility depends on ________